RGTH80TK65GC11

ROHM Semiconductor
755-RGTH80TK65GC11
RGTH80TK65GC11

Mfr.:

Description:
IGBTs High-Speed Switching Type, 650V 40A, TO-3PFM, Field Stop Trench IGBT

ECAD Model:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
22 Weeks Estimated factory production time.
Minimum: 450   Multiples: 450
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
2,78 € 1.251,00 €

Product Attribute Attribute Value Select Attribute
ROHM Semiconductor
Product Category: IGBTs
RoHS:  
Si
TO-3PFM-3
Through Hole
Single
650 V
2.1 V
30 V
31 A
66 W
- 40 C
+ 175 C
Tube
Brand: ROHM Semiconductor
Gate-Emitter Leakage Current: 200 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 450
Subcategory: IGBTs
Part # Aliases: RGTH80TK65
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Attributes selected: 0

Compliance Codes
TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
Thailand
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

Field Stop Trench IGBTs

ROHM Field Stop Trench IGBTs are energy-saving, high-efficiency IGBTs used in a wide range of high-voltage and high-current applications. These IGBTs feature a low collector and emitter saturation voltage, short-circuit that withstands time, and built-in very fast and soft recovery FRD. The field stop trench IGBTs are ideal for UPS, power conditioners, welder, and general inverters for industrial use.