RGT8TM65DGC9

ROHM Semiconductor
755-RGT8TM65DGC9
RGT8TM65DGC9

Mfr.:

Description:
IGBTs 5s Short-Circuit Tolerance, 650V 4A, FRD Built-in, TO-220NFM, Field Stop Trench IGBT

Lifecycle:
NRND:
Not recommended for new designs.
ECAD Model:
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In Stock: 712

Stock:
712 Can Dispatch Immediately
Factory Lead Time:
22 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 712 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
1,28 € 1,28 €
0,825 € 8,25 €

Product Attribute Attribute Value Select Attribute
ROHM Semiconductor
Product Category: IGBTs
RoHS:  
Si
TO-220NFM-3
Through Hole
Single
650 V
2.1 V
30 V
5 A
16 W
- 40 C
+ 175 C
Tube
Brand: ROHM Semiconductor
Gate-Emitter Leakage Current: 200 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 1000
Subcategory: IGBTs
Part # Aliases: RGT8TM65D
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Attributes selected: 0

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Compliance Codes
TARIC:
8541290000
CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99
Origin Classifications
Country of Origin:
Korea, Republic of
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

Field Stop Trench IGBTs

ROHM Field Stop Trench IGBTs are energy-saving, high-efficiency IGBTs used in a wide range of high-voltage and high-current applications. These IGBTs feature a low collector and emitter saturation voltage, short-circuit that withstands time, and built-in very fast and soft recovery FRD. The field stop trench IGBTs are ideal for UPS, power conditioners, welder, and general inverters for industrial use.