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RF6L025BGTCR

Name: ROHM Semiconductor RF6L025BGTCR
Brand: ROHM Semiconductor
SKU: 755-RF6L025BGTCR
Price: 0.61 EUR
Availability: InStock

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Mouser No:

755-RF6L025BGTCR

Mfr. No:

RF6L025BGTCR

Mfr.:

ROHM Semiconductor

Description:

MOSFETs SOT363 N-CH 60V 2.5A

Datasheet:

RF6L025BGTCR Datasheet

ECAD Model:

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More Information

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In Stock: 1.788

Stock:: 1.788 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	0,619 €	0,62 €
	0,385 €	3,85 €
	0,248 €	24,80 €
	0,188 €	94,00 €
	0,169 €	169,00 €
Full Reel (Order in multiples of 3000)
	0,144 €	432,00 €
	0,132 €	792,00 €
	0,114 €	1.026,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOT-363T-6
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	2.5 A
Rds On - Drain-Source Resistance:	91 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	3.1 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	ROHM Semiconductor
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	JP
Fall Time:	3.1 ns
Forward Transconductance - Min:	1.3 S
Product Type:	MOSFETs
Rise Time:	4.8 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	13 ns
Typical Turn-On Delay Time:	5.3 ns

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Datasheet

RF6L025BGTCR Datasheet

Specification Sheets

Datasheet - Chinese (English language)

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TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

RF6L025BG Power MOSFET

ROHM Semiconductor RF6L025BG Power MOSFET features 60V drain-source voltage (V_DSS) and ±2.5A continuous drain current (I_D). This N-channel MOSFET offers 91mΩ low on-resistance (R_DS(on)) and power dissipation of 1W (P_D). The RF6L025BG MOSFET operates within the -55°C to 150°C operating junction and storage temperature range and is available in a Halogen-free, small surface mount package (TUMT6 or SOT-363T). This RoHS-compliant device incorporates Pb-free plating. The RF6L025BG power MOSFET is suitable for switching, motor drives, and DC/DC converter applications.

Electronic Vehicle (EV) Solutions

ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to improve efficiency and performance in state-of-the-art EVs. ROHM offers products optimized for various solutions, with a focus on dedicated EV blocks, such as the main inverter, DC-DC converter, onboard charger, and electric compressor.