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RF4P060BGTCR

Name: ROHM Semiconductor RF4P060BGTCR
Brand: ROHM Semiconductor
SKU: 755-RF4P060BGTCR
Price: 1.04 EUR
Availability: InStock

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See Product Specifications

Mouser No:

755-RF4P060BGTCR

Mfr. No:

RF4P060BGTCR

Mfr.:

ROHM Semiconductor

Description:

MOSFETs Transistor, MOSFET Nch, 100V(Vdss), 6.0A(Id), (4.5V Drive)

Datasheet:

RF4P060BGTCR Datasheet

ECAD Model:

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More Information

Learn more about ROHM Semiconductor RF4P060BGTCR

In Stock: 5.320

Stock:: 5.320

Can Dispatch Immediately

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On Order:: 3.000

Expected 8/26/2026
Factory Lead Time:: 16

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	1,04 €	1,04 €
	0,65 €	6,50 €
	0,427 €	42,70 €
	0,331 €	165,50 €
	0,30 €	300,00 €
Full Reel (Order in multiples of 3000)
	0,28 €	840,00 €
	0,24 €	1.440,00 €
	0,234 €	2.106,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DFN-2020-8S
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	6 A
Rds On - Drain-Source Resistance:	78 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	6.7 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	2 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	ROHM Semiconductor
Configuration:	Single
Fall Time:	6 ns
Forward Transconductance - Min:	3.7 S
Product Type:	MOSFETs
Rise Time:	11 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	21 ns
Typical Turn-On Delay Time:	7.5 ns
Part # Aliases:	RF4P060BG

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Datasheet

RF4P060BGTCR Datasheet

Specification Sheets

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Compliance Codes

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Thailand
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

N-Channel SiC Power MOSFETs

ROHM Semiconductor N-Channel Silicon Carbide (SiC) Power MOSFETs feature no tail current during switching, resulting in faster operation and reduced switching loss. Their low ON resistance and compact chip size ensure low capacitance and gate charge. These ROHM SiC Power MOSFETs exhibit minimal ON-resistance increases and provides greater package miniaturization. This provides more energy savings than standard Si devices, in which the ON-resistance can more than double with increased temperature.

Electronic Vehicle (EV) Solutions

ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to improve efficiency and performance in state-of-the-art EVs. ROHM offers products optimized for various solutions, with a focus on dedicated EV blocks, such as the main inverter, DC-DC converter, onboard charger, and electric compressor.