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R6014YNXC7G

Name: ROHM Semiconductor R6014YNXC7G
Brand: ROHM Semiconductor
SKU: 755-R6014YNXC7G
Price: 3.18 EUR
Availability: InStock

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Mouser No:

755-R6014YNXC7G

Mfr. No:

R6014YNXC7G

Mfr.:

ROHM Semiconductor

Description:

MOSFETs TO220 650V 42A N-CH MOSFET

Datasheet:

R6014YNXC7G Datasheet

ECAD Model:

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Learn more about ROHM Semiconductor R6014YNXC7G

In Stock: 2.025

Stock:: 2.025 Can Dispatch Immediately

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Factory Lead Time:: 23 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 2025 will be subject to minimum order requirements.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	3,18 €	3,18 €
	2,12 €	21,20 €
	1,82 €	182,00 €
	1,51 €	755,00 €
	1,41 €	1.410,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220FM-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	14 A
Rds On - Drain-Source Resistance:	260 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	6 V
Qg - Gate Charge:	20 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	54 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	ROHM Semiconductor
Configuration:	Single
Fall Time:	13 ns
Product Type:	MOSFETs
Rise Time:	15 ns
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	42 ns
Typical Turn-On Delay Time:	22 ns
Part # Aliases:	R6014YNX

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Datasheet

R6014YNXC7G Datasheet

Specification Sheets

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Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290095
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

600V 4th Gen PrestoMOS™ Super Junction MOSFETs

ROHM Semiconductor 600V 4th Gen PrestoMOS™ Super Junction MOSFETs utilize original patented technology to accelerate the parasitic diode, achieving ultra-fast reverse recovery characteristics to achieve low power consumption. The PrestoMOS design enables a reduction in power loss of about 58% at light loads when compared with IGBT implementations. Additionally, raising the reference voltage needed to turn ON the MOSFET prevents self-turn-ON, which is one of the main causes of loss. The optimized built-in parasitic diode improves the soft recovery index specific to Super Junction MOSFETs, which reduces noise that can lead to malfunction.