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R6006JND3TL1

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See Product Specifications

Mouser No:

755-R6006JND3TL1

Mfr. No:

R6006JND3TL1

Mfr.:

ROHM Semiconductor

Description:

MOSFETs Transistor MOSFET, Nch 600V 6A 3rd Gen, Fast Recover

Lifecycle:

NRND:

Not recommended for new designs.

Datasheet:

R6006JND3TL1 Datasheet

ECAD Model:

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More Information

Learn more about ROHM Semiconductor R6006JND3TL1

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TO-252-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	6 A
Rds On - Drain-Source Resistance:	936 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	7 V
Qg - Gate Charge:	15.5 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	86 W
Channel Mode:	Enhancement
Packaging:	Reel
Brand:	ROHM Semiconductor
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	27 ns
Product Type:	MOSFETs
Rise Time:	14 ns
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	30 ns
Typical Turn-On Delay Time:	16 ns
Part # Aliases:	R6006JND3
Unit Weight:	330 mg

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Filter Document:

Datasheet

R6006JND3TL1 Datasheet

Other

PCN

Product Change Notification 2024-07-15 (PDF)

Specification Sheets

SPICE Models

SpiceLink

Technical Resources

Test/Quality Data

REACH Regulation (PDF)

RoHS (PDF)

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

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