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R6004END3TL1

Name: ROHM Semiconductor R6004END3TL1
Brand: ROHM Semiconductor
SKU: 755-R6004END3TL1
Price: 1.98 EUR
Availability: InStock

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See Product Specifications

Mouser No:

755-R6004END3TL1

Mfr. No:

R6004END3TL1

Mfr.:

ROHM Semiconductor

Description:

MOSFETs Transistor MOSFET, Nch 600V 4A 3rd Gen, Low Noise

Lifecycle:

NRND:

Not recommended for new designs.

Datasheet:

R6004END3TL1 Datasheet

ECAD Model:

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More Information

Learn more about ROHM Semiconductor R6004END3TL1

In Stock: 4.124

Stock:: 4.124 Can Dispatch Immediately

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Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 4124 will be subject to minimum order requirements.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	1,98 €	1,98 €
	1,27 €	12,70 €
	0,869 €	86,90 €
	0,691 €	345,50 €
	0,671 €	671,00 €
Full Reel (Order in multiples of 2500)
	0,627 €	1.567,50 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TO-252-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	4 A
Rds On - Drain-Source Resistance:	980 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	15 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	59 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	ROHM Semiconductor
Configuration:	Single
Fall Time:	40 ns
Forward Transconductance - Min:	1.5 S
Product Type:	MOSFETs
Rise Time:	22 ns
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	55 ns
Typical Turn-On Delay Time:	22 ns
Part # Aliases:	R6004END3
Unit Weight:	330 mg

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Filter Document:

Datasheet

R6004END3TL1 Datasheet

Other

PCN

Product Change Notification 2024-07-15 (PDF)

Specification Sheets

Technical Resources

Test/Quality Data

REACH Regulation (PDF)

RoHS (PDF)

Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

Super Junction-MOS EN & KN MOSFETs

ROHM Semiconductor Super Junction-MOS EN and KN MOSFETs combine the low-noise characteristics of planar MOSFETs and the low ON-resistance characteristics of Super Junction MOSFETs. The EN series is offered in 600V and 650V versions and is recommended for power supply circuits requiring noise countermeasures. The fast-switching KN series is offered in 600V, 650V, and 800V variants and is recommended for power supply circuits demanding lower loss and greater efficiency.

Silicon Power MOSFETs

ROHM Semiconductor Silicon Power MOSFETs feature ultra-fast switching speeds and low on-resistance. These MOSFETs are available in a wide lineup of packages, including the miniature 0604 size to save space in various designs.