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R5009FNX

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See Product Specifications

Mouser No:

755-R5009FNX

Mfr. No:

R5009FNX

Mfr.:

ROHM Semiconductor

Lifecycle:

NRND:

Not recommended for new designs.

Datasheet:

ECAD Model:

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Mfr.:

ROHM Semiconductor

Mfr. No:

R6009KNXC7G

Description:

MOSFETs TO220 600V 9A N-CH MOSFET

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220FM-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	500 V
Id - Continuous Drain Current:	9 A
Rds On - Drain-Source Resistance:	840 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	18 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	51 W
Channel Mode:	Enhancement
Packaging:	Bulk
Brand:	ROHM Semiconductor
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	KR
Fall Time:	40 ns
Forward Transconductance - Min:	4 S
Product Type:	MOSFETs
Rise Time:	20 ns
Series:	R5009FNX
Factory Pack Quantity:	500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	50 ns
Typical Turn-On Delay Time:	24 ns
Unit Weight:	2 g