+420 517070880

Part of the TTI Family of Specialists Contact Mouser (Czech Republic) +420 517070880 Feedback

Change Location

English

In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

View Basket

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

HT8MD5HTB1

Name: ROHM Semiconductor HT8MD5HTB1
Brand: ROHM Semiconductor
SKU: 755-HT8MD5HTB1
Price: 1.79 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

755-HT8MD5HTB1

Mfr. No:

HT8MD5HTB1

Mfr.:

ROHM Semiconductor

Description:

MOSFETs HSMT8 NPCH 80V 3.5A

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

HT8MD5HTB1 Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about ROHM Semiconductor HT8MD5HTB1

In Stock: 2.990

Stock:: 2.990 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	1,79 €	1,79 €
	1,14 €	11,40 €
	0,768 €	76,80 €
	0,609 €	304,50 €
	0,558 €	558,00 €
Full Reel (Order in multiples of 3000)
	0,495 €	1.485,00 €

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	HSMT-8
Transistor Polarity:	N-Channel, P-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	80 V, 80 V
Id - Continuous Drain Current:	8.5 A, 9 A
Rds On - Drain-Source Resistance:	112 mOhms, 191 mOhms
Vgs - Gate-Source Voltage:	20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V, 4 V
Qg - Gate Charge:	3.1 nC, 17.2 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	13 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	ROHM Semiconductor
Configuration:	Dual
Fall Time:	4.6 ns, 33 ns
Forward Transconductance - Min:	1.8 S, 3 S
Product Type:	MOSFETs
Rise Time:	5 ns, 7 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time:	12 ns, 74 ns
Typical Turn-On Delay Time:	5.8 ns, 9.4 ns

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

HT8MD5HTB1 Datasheet

This functionality requires JavaScript to be enabled.

Compliance Codes

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

Small Signal Dual Channel MOSFETs

ROHM Semiconductor Small Signal Dual Channel MOSFETs feature low on-resistance and fast switching. These MOSFETs are RoHS compliant and include Pb-free plating. The dual channel MOSFETs operate from -55°C to 150°C temperature range. These MOSFETs are used in motor drives and switching applications.