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EMZ1FHAT2R

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See Product Specifications

Mouser No:

755-EMZ1FHAT2R

Mfr. No:

EMZ1FHAT2R

Mfr.:

ROHM Semiconductor

Description:

Bipolar Transistors - BJT NPN+PNP, SOT-563, General Purpose Amplification Transistor

Lifecycle:

NRND:

Not recommended for new designs.

Datasheet:

EMZ1FHAT2R Datasheet (PDF)

ECAD Model:

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More Information

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	Bipolar Transistors - BJT
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOT-563-6
Transistor Polarity:	NPN, PNP
Configuration:	Dual
Collector- Emitter Voltage VCEO Max:	50 V
Collector- Base Voltage VCBO:	60 V
Emitter- Base Voltage VEBO:	7 V, 6 V
Collector-Emitter Saturation Voltage:	400 mV
Pd - Power Dissipation:	150 mW
Gain Bandwidth Product fT:	140 MHz, 180 MHz
Maximum Operating Temperature:	+ 150 C
Qualification:	AEC-Q101
Packaging:	Reel
Brand:	ROHM Semiconductor
Continuous Collector Current:	- 150 mA, 150 mA
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TH
DC Collector/Base Gain hFE Min:	120
DC Current Gain hFE Max:	560
Product Type:	BJTs - Bipolar Transistors
Factory Pack Quantity:	8000
Subcategory:	Transistors

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ROHM Semiconductors AEC-Q101 qualified products are not 
intended for volume automotive production without ROHM 
Semiconductors prior approval. 

Please contact ROHM Semiconductor for Production Part Approval 
Process (PPAP) requirements or contact a Mouser Technical Sales 
Representative for further assistance. 

5-0617-50