BSM400C12P3G202

ROHM Semiconductor
755-BSM400C12P3G202
BSM400C12P3G202

Mfr.:

Description:
Discrete Semiconductor Modules 1200V Vdss; 358A ID SiC Mod; SICSTD02

Datasheet:
ECAD Model:
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In Stock: 4

Stock:
4 Can Dispatch Immediately
Quantities greater than 4 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
969,46 € 969,46 €
818,38 € 9.820,56 €

Product Attribute Attribute Value Select Attribute
ROHM Semiconductor
Product Category: Discrete Semiconductor Modules
RoHS:  
MOSFET-SiC SBD Modules
Silicon Carbide (SiC) Module
SiC
1.7 V
1.2 kV
- 4 V, + 22 V
Screw Mount
Module
- 40 C
+ 150 C
BSMx
Tray
Brand: ROHM Semiconductor
Configuration: Chopper
Fall Time: 45 ns
Id - Continuous Drain Current: 400 A
Pd - Power Dissipation: 1.57 kW
Product Type: Discrete Semiconductor Modules
Rise Time: 40 ns
Factory Pack Quantity: 4
Subcategory: Discrete Semiconductor Modules
Transistor Polarity: N-Channel
Typical Delay Time: 55 ns
Typical Turn-Off Delay Time: 180 ns
Typical Turn-On Delay Time: 55 ns
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Vgs th - Gate-Source Threshold Voltage: 2.7 V
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Attributes selected: 0

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Compliance Codes
USHTS:
8541300080
ECCN:
EAR99
Origin Classifications
Country of Origin:
Japan
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

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