BSM300D12P3E005

ROHM Semiconductor
755-BSM300D12P3E005
BSM300D12P3E005

Mfr.:

Description:
MOSFET Modules SIC Pwr Module Half Bridge

Lifecycle:
NRND:
Not recommended for new designs.
Datasheet:
ECAD Model:
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In Stock: 4

Stock:
4 Can Dispatch Immediately
Factory Lead Time:
27 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 4 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
1.347,92 € 1.347,92 €

Possible Replacement

ROHM Semiconductor BSM300D12P4G101
ROHM Semiconductor
MOSFET Modules 1200V, 291A, Half bridge, Full SiC-Power Module with Trench MOSFET
Compare With Current Part

Product Attribute Attribute Value Select Attribute
ROHM Semiconductor
Product Category: MOSFET Modules
RoHS:  
SiC
Screw Mount
Module
N-Channel
2 Channel
1.2 kV
300 A
- 4 V, + 22 V
5.6 V
- 40 C
+ 150 C
1.26 kW
Bulk
Brand: ROHM Semiconductor
Configuration: Dual
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: JP
Fall Time: 50 ns
Height: 15.4 mm
Length: 152 mm
Product Type: MOSFET Modules
Rise Time: 35 ns
Factory Pack Quantity: 4
Subcategory: Discrete and Power Modules
Type: SiC Power Module
Typical Turn-Off Delay Time: 210 ns
Typical Turn-On Delay Time: 30 ns
Vr - Reverse Voltage: 1.2 kV
Width: 62 mm
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Attributes selected: 0

Datasheet

PCN

Specification Sheets

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USHTS:
8541590080
ECCN:
EAR99

Silicon Carbide (SiC) Power Devices

ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. ROHM SiC Power Devices also allow designers to use fewer components, further reducing design complexity.

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