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BSM300C12P3E301

Name: ROHM Semiconductor BSM300C12P3E301
Brand: ROHM Semiconductor
SKU: 755-BSM300C12P3E301
Price: 908.16 EUR
Availability: OutOfStock

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Mouser No:

755-BSM300C12P3E301

Mfr. No:

BSM300C12P3E301

Mfr.:

ROHM Semiconductor

Description:

Discrete Semiconductor Modules SIC Pwr Module Chopper

Datasheet:

BSM300C12P3E301 Datasheet (PDF)

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Availability

Stock:: Non-Stocked

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Factory Lead Time:: 27 Weeks Estimated factory production time.

Long lead time reported on this product.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	908,16 €	3.632,64 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	Discrete Semiconductor Modules
RoHS:
Product:	MOSFET-SiC SBD Modules
Type:	Silicon Carbide (SiC) Module
Technology:	SiC
Vf - Forward Voltage:	1.6 V
Vr - Reverse Voltage:	1.2 kV
Vgs - Gate-Source Voltage:	- 4 V, + 22 V
Mounting Style:	Screw Mount
Package/Case:	Module
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Packaging:	Bulk
Brand:	ROHM Semiconductor
Configuration:	Single
Fall Time:	30 ns
Id - Continuous Drain Current:	300 A
Pd - Power Dissipation:	1.36 kW
Product Type:	Discrete Semiconductor Modules
Rise Time:	35 ns
Factory Pack Quantity:	4
Subcategory:	Discrete Semiconductor Modules
Transistor Polarity:	N-Channel
Typical Turn-Off Delay Time:	170 ns
Typical Turn-On Delay Time:	40 ns
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Vgs th - Gate-Source Threshold Voltage:	2.7 V

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Datasheet

BSM300C12P3E301 Datasheet (PDF)

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Test/Quality Data

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Compliance Codes

TARIC:: 8541590000
CAHTS:: 8541590000
USHTS:: 8541590080
JPHTS:: 854159000
MXHTS:: 8541500100
ECCN:: EAR99

Origin Classifications

Country of Origin:: Japan
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

Silicon Carbide (SiC) Power Devices

ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. ROHM SiC Power Devices also allow designers to use fewer components, further reducing design complexity.

SiC Power Modules

ROHM Semiconductor SiC power modules are half-bridge SiC modules that integrate a SiC MOSFET and SiC SBD into a single package. These ROHM modules support high-frequency operation through reduced switching loss. The optimized design reduces stray inductance compared to existing solutions. And to prevent excessive heat generation, E Type models that integrate an additional thermistor are offered.