BM3G005MUV-LBE2

ROHM Semiconductor
755-BM3G005MUV-LBE2
BM3G005MUV-LBE2

Mfr.:

Description:
GaN FETs PMIC Power Switch/Driver, 650V, 5m, Low Side Nch

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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Learn more about ROHM Semiconductor BM3G005MUV-LBE2

In Stock: 995

Stock:
995 Can Dispatch Immediately
Factory Lead Time:
21 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
12,93 € 12,93 €
9,54 € 95,40 €
8,80 € 880,00 €
Full Reel (Order in multiples of 1000)
8,04 € 8.040,00 €

Product Attribute Attribute Value Select Attribute
ROHM Semiconductor
Product Category: GaN FETs
RoHS:  
SMD/SMT
VQFN-46
1 Channel
650 V
68.8 A
70 mOhms
- 40 C
+ 105 C
Enhancement
Nano Cap; EcoGaN
Brand: ROHM Semiconductor
Fall Time: 2.7 ns
Maximum Operating Frequency: 2 MHz
Packaging: Reel
Packaging: Cut Tape
Product: GaN HEMT Power Stage
Product Type: GaN FETs
Rise Time: 5 ns
Factory Pack Quantity: 1000
Subcategory: Transistors
Technology: Si
Typical Turn-Off Delay Time: 19 ns
Typical Turn-On Delay Time: 14 ns
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Attributes selected: 0

Datasheet

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Compliance Codes
USHTS:
8542390070
MXHTS:
8542399999
ECCN:
EAR99
Origin Classifications
Country of Origin:
Japan
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

Nano Cap™ 650V GaN HEMT Power Stage ICs

ROHM Semiconductor Nano Cap™ 650V GaN HEMT Power Stage ICs are designed for demanding electronics systems. These ICs boast a blend of high power density and efficiency. The devices integrate a 650V enhancement GaN HEMT and a silicon driver. ROHM Semiconductor Nano Cap 650V GaN HEMT Power Stage ICs are ideal for applications that include industrial equipment, power supplies, bridge topology, and adapters.

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