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AG502EED3HRBTL

Name: ROHM Semiconductor AG502EED3HRBTL
Brand: ROHM Semiconductor
SKU: 755-AG502EED3HRBTL
Price: 1.92 EUR
Availability: InStock

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Mouser No:

755-AG502EED3HRBTL

Mfr. No:

AG502EED3HRBTL

Mfr.:

ROHM Semiconductor

Description:

MOSFETs Pch -30V -78A, TO-252 (DPAK), Power MOSFET for Automotive

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

AG502EED3HRBTL Datasheet

ECAD Model:

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More Information

Learn more about ROHM Semiconductor AG502EED3HRBTL

In Stock: 2.375

Stock:: 2.375 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	1,92 €	1,92 €
	1,23 €	12,30 €
	0,835 €	83,50 €
	0,667 €	333,50 €
	0,63 €	630,00 €
Full Reel (Order in multiples of 2500)
	0,60 €	1.500,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TO-252-3
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	78 A
Rds On - Drain-Source Resistance:	8.5 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 5 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	52 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	77 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	ROHM Semiconductor
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TH
Fall Time:	34 ns
Forward Transconductance - Min:	14 S
Product Type:	MOSFETs
Rise Time:	15 ns
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	80 ns
Typical Turn-On Delay Time:	8.4 ns

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Datasheet

AG502EED3HRBTL Datasheet

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

N-Channel SiC Power MOSFETs

ROHM Semiconductor N-Channel Silicon Carbide (SiC) Power MOSFETs feature no tail current during switching, resulting in faster operation and reduced switching loss. Their low ON resistance and compact chip size ensure low capacitance and gate charge. These ROHM SiC Power MOSFETs exhibit minimal ON-resistance increases and provides greater package miniaturization. This provides more energy savings than standard Si devices, in which the ON-resistance can more than double with increased temperature.