MB85RS4MLYPN-GS-AWEWE1

RAMXEED
249-85S4MLYPNGSAWW1
MB85RS4MLYPN-GS-AWEWE1

Mfr.:

Description:
F-RAM 4Mbit FeRAM, SPI, 1.7-1.95V - DFN8 T&R (AECQ100 125C)

Datasheet:
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Learn more about RAMXEED MB85RS4MLYPN-GS-AWEWE1

Availability

Stock:
Non-Stocked
Factory Lead Time:
22 Weeks Estimated factory production time.
Minimum: 1500   Multiples: 1500
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
Full Reel (Order in multiples of 1500)
12,01 € 18.015,00 €

Product Attribute Attribute Value Select Attribute
RAMXEED
Product Category: F-RAM
RoHS:  
4 Mbit
SPI
50 MHz
512 k x 8
DFN-8
1.7 V
1.95 V
- 40 C
+ 125 C
AEC-Q100
Reel
Brand: RAMXEED
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: JP
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Operating Supply Voltage: 1.8 V
Product Type: FRAM
Factory Pack Quantity: 1500
Subcategory: Memory & Data Storage
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Attributes selected: 0

Datasheet

USHTS:
8542320071
ECCN:
3A991.b.1.b.1

FRAM (Ferroelectric Random Access Memory)

RAMXEED FRAM (Ferroelectric Random Access Memory) is a non-volatile memory featuring fast writing speed operation, high read/write endurance, and low power consumption. These features make FRAM ideal for applications requiring continuous data logging, real-time recording of three-dimensional position information, and data protection from sudden power outages.

MB85RS4MLY 4M (512K x 8) Bit SPI FRAM

RAMXEED MB85RS4MLY 4M (512K x 8) Bit SPI FRAM (Ferroelectric Random Access Memory) chip features a configuration of 524,288 words x 8-bits. The devices utilize the ferroelectric and silicon gate CMOS process technologies to form nonvolatile memory cells. The MB85RS4MLY employs a Serial Peripheral Interface (SPI) and is ideal for high-temperature environment applications.

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