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MB85RS4MLYPN-G-AWEWE1

Name: RAMXEED MB85RS4MLYPN-G-AWEWE1
Brand: RAMXEED
SKU: 249-85S4MLYPNGAWERE1
Price: 10.73 EUR
Availability: OutOfStock

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Mouser No:

249-85S4MLYPNGAWERE1

Mfr. No:

MB85RS4MLYPN-G-AWEWE1

Mfr.:

RAMXEED

Description:

F-RAM 4Mbit FeRAM, SPI, 1.7 1.95V - DFN8 T&R (125?)

Datasheet:

MB85RS4MLYPN-G-AWEWE1 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about RAMXEED MB85RS4MLYPN-G-AWEWE1

Availability

Stock:: Non-Stocked

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Factory Lead Time:: 20 Weeks Estimated factory production time.

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Minimum: 1500 Multiples: 1500

Unit Price:

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Ext. Price:

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Est. Tariff:

This Product Ships FREE

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Full Reel (Order in multiples of 1500)
	10,73 €	16.095,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	RAMXEED
Product Category:	F-RAM
RoHS:
Memory Size:	4 Mbit
Interface Type:	SPI
Maximum Clock Frequency:	50 MHz
Organisation:	512 k x 8
Package/Case:	DFN-8
Supply Voltage - Min:	1.7 V
Supply Voltage - Max:	1.95 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Packaging:	Reel
Brand:	RAMXEED
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	JP
Moisture Sensitive:	Yes
Mounting Style:	SMD/SMT
Operating Supply Voltage:	1.8 V
Product Type:	FRAM
Factory Pack Quantity:	1500
Subcategory:	Memory & Data Storage

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Datasheet

MB85RS4MLYPN-G-AWEWE1 Datasheet (PDF)

USHTS:: 8542320071
ECCN:: 3A991.b.1.b.1

AEC-Q100 Compliant SPI FeRAM Family

RAMXEED AEC-Q100 Compliant SPI Ferroelectric Random Access Memory (FeRAM) Family is a high‑reliability lineup of nonvolatile ferroelectric memories designed for demanding automotive and industrial environments. These devices operate across a wide temperature range of -40°C to +125°C, making the devices suitable for harsh conditions commonly found in vehicles and high‑temperature equipment. Built on FeRAM technology, these RAMXEED components combine the nonvolatility of traditional EEPROM or Flash with the speed and endurance of SRAM‑like memory cells, offering exceptionally high read/write endurance (up to 10¹⁴ cycles in many automotive‑grade SPI variants), and instant, delay‑free writes that support frequent data updates without performance degradation.

MB85RS4MLY 4M (512K x 8) Bit SPI FRAM

RAMXEED MB85RS4MLY 4M (512K x 8) Bit SPI FRAM (Ferroelectric Random Access Memory) chip features a configuration of 524,288 words x 8-bits. The devices utilize the ferroelectric and silicon gate CMOS process technologies to form nonvolatile memory cells. The MB85RS4MLY employs a Serial Peripheral Interface (SPI) and is ideal for high-temperature environment applications.

FRAM (Ferroelectric Random Access Memory)

RAMXEED FRAM (Ferroelectric Random Access Memory) is a non-volatile memory featuring fast writing speed operation, high read/write endurance, and low power consumption. These features make FRAM ideal for applications requiring continuous data logging, real-time recording of three-dimensional position information, and data protection from sudden power outages.