MB85RS2MTYPN-GS-AWEWE1

RAMXEED
249-85S2MTYPNGSAWW1
MB85RS2MTYPN-GS-AWEWE1

Mfr.:

Description:
F-RAM 2Mbit FeRAM, SPI, 1.8-3.6V - DFN8 T&R (AEC-Q100 125C)

Datasheet:
ECAD Model:
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Learn more about RAMXEED MB85RS2MTYPN-GS-AWEWE1

Availability

Stock:
Non-Stocked
Factory Lead Time:
22 Weeks Estimated factory production time.
Minimum: 1500   Multiples: 1500
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
Full Reel (Order in multiples of 1500)
11,34 € 17.010,00 €

Product Attribute Attribute Value Select Attribute
RAMXEED
Product Category: F-RAM
RoHS:  
2 Mbit
SPI
50 MHz
256 k x 8
DFN-8
1.8 V
3.6 V
- 40 C
+ 125 C
AEC-Q100
Reel
Brand: RAMXEED
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Operating Supply Voltage: 3.3 V
Product Type: FRAM
Factory Pack Quantity: 1500
Subcategory: Memory & Data Storage
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Attributes selected: 0

Datasheet

Compliance Codes
USHTS:
8542320071
ECCN:
3A991.b.1.b.1
Origin Classifications
Country of Origin:
Japan
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

FRAM (Ferroelectric Random Access Memory)

RAMXEED FRAM (Ferroelectric Random Access Memory) is a non-volatile memory featuring fast writing speed operation, high read/write endurance, and low power consumption. These features make FRAM ideal for applications requiring continuous data logging, real-time recording of three-dimensional position information, and data protection from sudden power outages.

AEC-Q100 Compliant SPI FeRAM Family

RAMXEED AEC-Q100 Compliant SPI Ferroelectric Random Access Memory (FeRAM) Family is a high‑reliability lineup of nonvolatile ferroelectric memories designed for demanding automotive and industrial environments. These devices operate across a wide temperature range of -40°C to +125°C, making the devices suitable for harsh conditions commonly found in vehicles and high‑temperature equipment. Built on FeRAM technology, these RAMXEED components combine the nonvolatility of traditional EEPROM or Flash with the speed and endurance of SRAM‑like memory cells, offering exceptionally high read/write endurance (up to 1014 cycles in many automotive‑grade SPI variants), and instant, delay‑free writes that support frequent data updates without performance degradation.

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