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QPD2793

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See Product Specifications

Mouser No:

772-QPD2793

Mfr. No:

QPD2793

Mfr.:

Qorvo

Description:

GaN FETs 2.62-2.69GHz GaN 200W 48V

Lifecycle:

Restricted Availability:

This part number is not currently available from Mouser. Product may be in limited distribution or a factory special order.

Datasheet:

QPD2793 Datasheet

ECAD Model:

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More Information

Learn more about Qorvo QPD2793

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Qorvo
Product Category:	GaN FETs
Delivery Restrictions:	Mouser does not presently sell this product in your region.
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	NI400-2
Transistor Polarity:	N-Channel
Minimum Operating Temperature:	- 40 C
Brand:	Qorvo
Configuration:	Single
Gain:	19 dB
Maximum Operating Frequency:	2.69 GHz
Minimum Operating Frequency:	2.62 GHz
Output Power:	200 W
Packaging:	Tray
Product Type:	GaN FETs
Series:	QPD2793
Factory Pack Quantity:	25
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	HEMT
Part # Aliases:	1130771

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Datasheet

QPD2793 Datasheet

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Compliance Codes

CNHTS:: 8542330000
CAHTS:: 8542330000
USHTS:: 8542330001
MXHTS:: 8542330201
ECCN:: EAR99

Origin Classifications

Country of Origin:: United States
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

QPD GaN RF Transistors

Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.