QPD1881L

772-QPD1881L
QPD1881L

Mfr.:

Description:
GaN FETs 2.7-2.9 GHz, 400W,50V,GaN RF Pwr Tr

Lifecycle:
Obsolete
Datasheet:
ECAD Model:
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Availability

Stock:

Product Attribute Attribute Value Select Attribute
Qorvo
Product Category: GaN FETs
Delivery Restrictions:
 Mouser does not presently sell this product in your region.
RoHS:  
SMD/SMT
NI780-2
N-Channel
145 V
13 A
- 40 C
+ 85 C
237 W
Brand: Qorvo
Configuration: Single
Development Kit: QPD1881LEVB01
Gain: 21.2 dB
Maximum Drain Gate Voltage: 55 V
Maximum Operating Frequency: 2.9 GHz
Minimum Operating Frequency: 2.7 GHz
Moisture Sensitive: Yes
Output Power: 400 W
Product Type: GaN FETs
Series: QPD1881L
Factory Pack Quantity: 25
Subcategory: Transistors
Technology: GaN
Transistor Type: HEMT
Vgs - Gate-Source Breakdown Voltage: - 7 V to 2 V
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Compliance Codes
USHTS:
8542390090
ECCN:
EAR99
Origin Classifications
Country of Origin:
United States
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

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