QPD1015

Qorvo
772-QPD1015
QPD1015

Mfr.:

Description:
GaN FETs DC-3.7GHz 65W 50V SSG 20dB GaN

ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

In Stock: 25

Stock:
25 Can Dispatch Immediately
Factory Lead Time:
20 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
332,75 € 332,75 €
255,12 € 6.378,00 €

Product Attribute Attribute Value Select Attribute
Qorvo
Product Category: GaN FETs
RoHS:  
SMD/SMT
NI-360
N-Channel
50 V
2.5 A
- 2.8 V
- 40 C
+ 85 C
64 W
Brand: Qorvo
Configuration: Single
Development Kit: QPD1015PCB401
Gain: 20 dB
Maximum Operating Frequency: 3.7 GHz
Minimum Operating Frequency: 0 Hz
Moisture Sensitive: Yes
Output Power: 70 W
Packaging: Tray
Product Type: GaN FETs
Series: QPD1015
Factory Pack Quantity: 25
Subcategory: Transistors
Technology: GaN
Transistor Type: HEMT
Vgs - Gate-Source Breakdown Voltage: 145 V
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

This functionality requires JavaScript to be enabled.

Compliance Codes
TARIC:
8542399000
CNHTS:
8504409190
CAHTS:
8542390000
USHTS:
8542390090
JPHTS:
854239099
MXHTS:
8542399901
ECCN:
EAR99
Origin Classifications
Country of Origin:
United States
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

QPD GaN RF Transistors

Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.