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QPD1013SR

Name: Qorvo QPD1013SR
Brand: Qorvo
SKU: 772-QPD1013SR
Price: 168.43 EUR
Availability: OutOfStock

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Mouser No:

772-QPD1013SR

Mfr. No:

QPD1013SR

Mfr.:

Qorvo

Description:

GaN FETs DC-2.7GHz 150W PAE 64.8%

Datasheet:

QPD1013SR Datasheet (PDF)

ECAD Model:

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Availability

Stock:: Non-Stocked

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Factory Lead Time:: 22 Weeks Estimated factory production time.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
Full Reel (Order in multiples of 100)
	168,43 €	16.843,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Qorvo
Product Category:	GaN FETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	DFN-6
Transistor Polarity:	N-Channel
Id - Continuous Drain Current:	1.7 A
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Pd - Power Dissipation:	67 W
Brand:	Qorvo
Configuration:	Single Triple Drain
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	US
Development Kit:	QPD1013EVB01
Gain:	21.8 dB
Maximum Drain Gate Voltage:	65 V
Maximum Operating Frequency:	2.7 GHz
Minimum Operating Frequency:	1.2 GHz
Moisture Sensitive:	Yes
Output Power:	178 W
Packaging:	Reel
Product Type:	GaN FETs
Series:	QPD1013
Factory Pack Quantity:	100
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	HEMT
Part # Aliases:	QPD1013
Unit Weight:	7,792 g

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Datasheet

QPD1013SR Datasheet (PDF)

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TARIC:: 8517620000
CNHTS:: 8541210000
CAHTS:: 8517620090
USHTS:: 8541290055
ECCN:: EAR99

QPD GaN RF Transistors

Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

QPD1013 GaN RF Transistor

Qorvo QPD1013 GaN RF Transistor is a high-power, wide-bandwidth High Electron Mobility Transistor (HEMT) which operates from DC to 2.7GHz. This single-stage unmatched power transistor is a 150W discrete GaN on SiC device. The QPD1013 RF transistor features an over-molded plastic package and is suitable for numerous applications such as military radar, land mobile, and military radio communications.