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PTGH7565S1_T0_00201

Name: Panjit PTGH7565S1_T0_00201
Brand: Panjit
SKU: 241-PTGH7565S1T00201
Price: 8.19 EUR
Availability: InStock

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Mouser No:

241-PTGH7565S1T00201

Mfr. No:

PTGH7565S1_T0_00201

Mfr.:

Panjit

Description:

IGBTs 650V/75A Insulated Gate Bipolar Transistor

Datasheet:

PTGH7565S1_T0_00201 Datasheet (PDF)

ECAD Model:

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In Stock: 900

Stock:: 900 Can Dispatch Immediately

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Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	8,19 €	8,19 €
	6,21 €	62,10 €
	5,16 €	619,20 €
	4,30 €	2.193,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Panjit
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-247-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.65 V
Maximum Gate Emitter Voltage:	20 V
Continuous Collector Current at 25 C:	133 A
Pd - Power Dissipation:	366 W
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Packaging:	Tube
Brand:	Panjit
Continuous Collector Current Ic Max:	225 A
Gate-Emitter Leakage Current:	200 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	30
Subcategory:	IGBTs
Unit Weight:	6,280 g

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Datasheet

PTGH7565S1_T0_00201 Datasheet (PDF)

Compliance Codes

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Taiwan
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

PTGH High-Speed 650V Field Stop Trench IGBTs

PANJIT PTGH High-Speed 650V Field Stop Trench IGBTs offer superior high-speed switching capabilities with a low saturation voltage of 1.65V at T_VJ +25°C. PANJIT PTGH IGBTs are co-packaged with low Q_rr and a soft recovery diode. The IGBTs ensure efficient performance with a maximum junction temperature of T_VJ +175°C. The devices are designed for reliability under demanding conditions. A positive coefficient V_CEsat enables easy paralleling usage. Moreover, the IGBTs are lead-free, comply with EU RoHS 2.0 standards, and utilize a Green molding compound in line with IEC 61249 standards.