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PSMQC060N06LS1-AU_R2_006A1

Name: Panjit PSMQC060N06LS1-AU_R2_006A1
Brand: Panjit
SKU: 241-PSMQC060N06LS1AU
Price: 1.51 EUR
Availability: InStock

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Mouser No:

241-PSMQC060N06LS1AU

Mfr. No:

PSMQC060N06LS1-AU_R2_006A1

Mfr.:

Panjit

Description:

MOSFETs 60V 6m ohms AECQ101 qualified Solution for Automotive lighting

Datasheet:

PSMQC060N06LS1-AU_R2_006A1 Datasheet (PDF)

ECAD Model:

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Learn more about Panjit PSMQC060N06LS1-AU_R2_006A1

In Stock: 5.750

Stock:: 5.750 Can Dispatch Immediately

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Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	1,51 €	1,51 €
	1,03 €	10,30 €
	0,723 €	72,30 €
	0,591 €	295,50 €
	0,578 €	578,00 €
Full Reel (Order in multiples of 3000)
	0,578 €	1.734,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Panjit
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DFN-5060-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	68 A
Rds On - Drain-Source Resistance:	6 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	19 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	50 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Panjit
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	33 ns
Product Type:	MOSFETs
Rise Time:	85 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	65 ns
Typical Turn-On Delay Time:	31 ns
Part # Aliases:	PSMQC060N06LS1-AU
Unit Weight:	0,080 mg

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Datasheet

PSMQC060N06LS1-AU_R2_006A1 Datasheet (PDF)

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

60V Automotive P-Channel MOSFETs

PANJIT 60V Automotive P-Channel MOSFETs are designed with advanced trench process technology to minimize R_DS(ON) while maximizing avalanche ruggedness and space usage. With AEC-Q101 qualification and a high junction temperature of +175°C, these MOSFETs are the optimal choice for automotive design engineers who wish to simplify circuitry while optimizing performance. PANJIT’s P-channel MOSFETs can reduce the circuit complexity of power designs. These components are available in a wide range of compact packages, including SOT-23, SOT-23 6L-1, DFN2020B-6L, DFN3333-8L, DFN5060-8L, and TO-252AA.

60V N-Channel Enhancement Mode MOSFETs

PANJIT 60V N-Channel Enhancement Mode MOSFETs offer low reverse transfer capacitance in an AEC-Q101-qualified DFN5060-8L package. Operating within a -55°C to +150°C junction temperature range, these MOSFETs provide a maximum power dissipation range from 20W to 50W and single pulse avalanche ratings (28A current, 39mJ energy). Applications include automotive LED lighting, wireless chargers, and DC/DC converters.