PJS6839_S1_00001

Panjit
241-PJS6839_S1_00001
PJS6839_S1_00001

Mfr.:

Description:
MOSFETs 60V Dual P-Channel Enhancement Mode MOSFET

ECAD Model:
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In Stock: 5.414

Stock:
5.414 Can Dispatch Immediately
Factory Lead Time:
14 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
0,318 € 0,32 €
0,196 € 1,96 €
0,124 € 12,40 €
0,092 € 46,00 €
0,082 € 82,00 €
Full Reel (Order in multiples of 3000)
0,068 € 204,00 €
0,061 € 366,00 €
0,06 € 540,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
Panjit
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
SOT-23-6
P-Channel
2 Channel
60 V
300 mA
4 Ohms
- 20 V, 20 V
2.5 V
1.1 nC
- 55 C
+ 150 C
500 mW
Enhancement
Reel
Cut Tape
MouseReel
Brand: Panjit
Fall Time: 32 ns
Product Type: MOSFETs
Rise Time: 19 ns
Factory Pack Quantity: 3000
Subcategory: Transistors
Transistor Type: 2 P-Channel
Typical Turn-Off Delay Time: 52 ns
Typical Turn-On Delay Time: 4.8 ns
Unit Weight: 14,194 mg
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Compliance Codes
TARIC:
8541290000
CNHTS:
8541210000
USHTS:
8541210095
ECCN:
EAR99
Origin Classifications
Country of Origin:
Taiwan
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

60V P-Channel Enhancement Mode MOSFETs

PANJIT 60V P-Channel Enhancement Mode MOSFETs are designed with advanced trench technology to minimize RDS(ON) while maximizing avalanche ruggedness and space usage while maintaining superior switching performance. The devices feature a 200mA to 16A continuous drain current, a 1.1nC to 22nC gate charge, and 300mW to 50W power dissipation. The MOSFETs include advanced Trench Process technology and are optimized for use as relay drivers and line drivers. With AEC-Q101 qualification options and a high junction temperature of 175°C, the MOSFETs are ideal for automotive design engineers to simplify circuitry while optimizing performances.