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PJA3413_R2_00001

Name: Panjit PJA3413_R2_00001
Brand: Panjit
SKU: 241-PJA3413_R2_00001
Price: 0.06 EUR
Availability: OutOfStock

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Mouser No:

241-PJA3413_R2_00001

Mfr. No:

PJA3413_R2_00001

Mfr.:

Panjit

Description:

MOSFETs 20V P-Channel Enhancement Mode MOSFET

Datasheet:

PJA3413_R2_00001 Datasheet (PDF)

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Availability

Stock:: Non-Stocked

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Factory Lead Time:: 52 Weeks Estimated factory production time.

Long lead time reported on this product.

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Minimum: 12000 Multiples: 12000

Unit Price:

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Ext. Price:

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Est. Tariff:

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
Full Reel (Order in multiples of 12000)
	0,062 €	744,00 €

Similar Product

Mfr.:

Panjit

Mfr. No:

PJA3413_R1_00001

Description:

MOSFETs 20V P-Channel Enhancement Mode MOSFET

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Panjit
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOT-23-3
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	3.4 A
Rds On - Drain-Source Resistance:	82 mOhms
Vgs - Gate-Source Voltage:	- 12 V, 12 V
Vgs th - Gate-Source Threshold Voltage:	1.2 V
Qg - Gate Charge:	7 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.25 W
Channel Mode:	Enhancement
Packaging:	Reel
Brand:	Panjit
Configuration:	Single
Fall Time:	5 ns
Product Type:	MOSFETs
Rise Time:	4 ns
Factory Pack Quantity:	12000
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	34 ns
Typical Turn-On Delay Time:	10 ns
Unit Weight:	8 mg

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Datasheet

PJA3413_R2_00001 Datasheet (PDF)

Application Notes

Understanding Medium Voltage and Super Junction MOSFET Datasheet Parameters (PDF)

PCN

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TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Power MOSFETs for Wireless Charging Transmitters

PANJIT Power MOSFETs for Wireless Charging Transmitters provide an advanced solution for the wireless chargers to work properly and efficiently. These wireless charging transmitters are designed to transfer the electromagnetic field to the battery receiver of its application. The power MOSFETs are assembled in a low-profile package that saves space while delivering similar on-resistance and thermal resistance. These devices feature low switching losses, high switching frequency operation, low operating temperature, and low gate drive losses. The power MOSFETs are ideally used in wireless charging pads, wireless charging sockets, wireless charging cases, and wireless charging stations.