PCDP15120G1_T0_00001

Panjit
241-PCDP15120G1T0001
PCDP15120G1_T0_00001

Mfr.:

Description:
SiC Schottky Diodes 1200V SiC Schottky Barrier Diode

ECAD Model:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
16 Weeks Estimated factory production time.
Minimum: 2000   Multiples: 2000
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
5,16 € 10.320,00 €

Product Attribute Attribute Value Select Attribute
Panjit
Product Category: SiC Schottky Diodes
RoHS:  
Through Hole
TO-220AC-2
Single
15 A
1.2 kV
1.5 V
880 A
15 uA
- 55 C
+ 175 C
SiC Gen.1
Tube
Brand: Panjit
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Pd - Power Dissipation: 223.9 W
Product Type: SiC Schottky Diodes
Factory Pack Quantity: 2000
Subcategory: Diodes & Rectifiers
Vr - Reverse Voltage: 1.2 kV
Unit Weight: 1,890 g
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TARIC:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
JPHTS:
854110090
KRHTS:
8541109000
MXHTS:
8541100101
BRHTS:
85411099
ECCN:
EAR99

SiC Schottky Barrier Diodes

PANJIT SiC Schottky Barrier Diodes provide zero reverse recovery current, low forward voltage drop, and temperature-independent switching behavior. The devices have a high surge current capability, and excellent thermal performance. Silicon carbide technology provides lower conduction losses. The diodes can deliver stability and high ruggedness throughout -55°C to +175°C operating temperature range.