PCDP15120G1_T0_00001

Panjit
241-PCDP15120G1T0001
PCDP15120G1_T0_00001

Mfr.:

Description:
SiC Schottky Diodes 1200V SiC Schottky Barrier Diode

ECAD Model:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
16 Weeks Estimated factory production time.
Minimum: 2000   Multiples: 2000
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
5,16 € 10.320,00 €

Product Attribute Attribute Value Select Attribute
Panjit
Product Category: SiC Schottky Diodes
RoHS:  
Through Hole
TO-220AC-2
Single
15 A
1.2 kV
1.5 V
880 A
15 uA
- 55 C
+ 175 C
SiC Gen.1
Tube
Brand: Panjit
Pd - Power Dissipation: 223.9 W
Product Type: SiC Schottky Diodes
Factory Pack Quantity: 2000
Subcategory: Diodes & Rectifiers
Vr - Reverse Voltage: 1.2 kV
Unit Weight: 1,890 g
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Compliance Codes
TARIC:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
JPHTS:
854110090
KRHTS:
8541109000
MXHTS:
8541100101
BRHTS:
85411099
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

SiC Schottky Barrier Diodes

PANJIT SiC Schottky Barrier Diodes provide zero reverse recovery current, low forward voltage drop, and temperature-independent switching behavior. The devices have a high surge current capability, and excellent thermal performance. Silicon carbide technology provides lower conduction losses. The diodes can deliver stability and high ruggedness throughout -55°C to +175°C operating temperature range.