PCDH30120CCG1_T0_00601

Panjit
241-PCDH3012CG1T0601
PCDH30120CCG1_T0_00601

Mfr.:

Description:
SiC Schottky Diodes 1200V SiC Schottky Barrier Diode

Datasheet:
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In Stock: 1.500

Stock:
1.500 Can Dispatch Immediately
Factory Lead Time:
35 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 1500 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
11,72 € 11,72 €
10,68 € 106,80 €

Product Attribute Attribute Value Select Attribute
Panjit
Product Category: SiC Schottky Diodes
RoHS:  
Tube
Brand: Panjit
Product Type: SiC Schottky Diodes
Factory Pack Quantity: 30
Subcategory: Diodes & Rectifiers
Unit Weight: 6,231 g
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Datasheet

PCN

Compliance Codes
TARIC:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

SiC Schottky Barrier Diodes

PANJIT SiC Schottky Barrier Diodes provide zero reverse recovery current, low forward voltage drop, and temperature-independent switching behavior. The devices have a high surge current capability, and excellent thermal performance. Silicon carbide technology provides lower conduction losses. The diodes can deliver stability and high ruggedness throughout -55°C to +175°C operating temperature range.

650V N-Channel Super Junction MOSFETs

Panjit 650V N-Channel Super Junction MOSFETs feature a low RDS(ON) and high-speed switching in an ITO-220AB-F package. The 650V MOSFETs support an RDS(ON) of 280mΩ, 380mΩ, 600mΩ, or 900mΩ. In addition, the MOSFETs provide a 4.7A, 7.3A, 10.6A, or 13.8A current. The 100% avalanche and Rg tested Panjit 650V N-Ch Super Junction MOSFETs offer ease of use.

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