PCDF1065G1_T0_00601

Panjit
241-PCDF1065G1T00601
PCDF1065G1_T0_00601

Mfr.:

Description:
SiC Schottky Diodes 650V/10A Through Hole Silicon Carbide Schottky Barrier Diode

Datasheet:
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Learn more about Panjit PCDF1065G1_T0_00601

Availability

Stock:
Non-Stocked
Factory Lead Time:
18 Weeks Estimated factory production time.
Minimum: 2000   Multiples: 50
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
2,72 € 5.440,00 €

Product Attribute Attribute Value Select Attribute
Panjit
Product Category: SiC Schottky Diodes
RoHS:  
Through Hole
ITO-220AC-2
Single
10 A
650 V
1.5 V
560 A
3 uA
- 55 C
+ 175 C
Tube
Brand: Panjit
Pd - Power Dissipation: 104.2 W
Product Type: SiC Schottky Diodes
Factory Pack Quantity: 50
Subcategory: Diodes & Rectifiers
Vr - Reverse Voltage: 650 V
Unit Weight: 1,562 g
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Attributes selected: 0

Datasheet

Compliance Codes
TARIC:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

SiC Schottky Barrier Diodes

PANJIT SiC Schottky Barrier Diodes provide zero reverse recovery current, low forward voltage drop, and temperature-independent switching behavior. The devices have a high surge current capability, and excellent thermal performance. Silicon carbide technology provides lower conduction losses. The diodes can deliver stability and high ruggedness throughout -55°C to +175°C operating temperature range.

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