PCDF0465G1_T0_00601

Panjit
241-PCDF0465G1T00601
PCDF0465G1_T0_00601

Mfr.:

Description:
SiC Schottky Diodes 650V/4A Through Hole Silicon Carbide Schottky Barrier Diode

ECAD Model:
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In Stock: 2.000

Stock:
2.000 Can Dispatch Immediately
Factory Lead Time:
18 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
3,87 € 3,87 €
1,99 € 19,90 €
1,79 € 179,00 €
1,47 € 735,00 €
1,40 € 1.400,00 €

Product Attribute Attribute Value Select Attribute
Panjit
Product Category: SiC Schottky Diodes
RoHS:  
Through Hole
ITO-220AC -2
Single
4 A
650 V
1.5 V
360 A
2.5 uA
- 55 C
+ 175 C
Tube
Brand: Panjit
Pd - Power Dissipation: 53.6 W
Product Type: SiC Schottky Diodes
Factory Pack Quantity: 50
Subcategory: Diodes & Rectifiers
Vr - Reverse Voltage: 650 V
Unit Weight: 1,562 g
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Attributes selected: 0

Compliance Codes
TARIC:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

SiC Schottky Barrier Diodes

PANJIT SiC Schottky Barrier Diodes provide zero reverse recovery current, low forward voltage drop, and temperature-independent switching behavior. The devices have a high surge current capability, and excellent thermal performance. Silicon carbide technology provides lower conduction losses. The diodes can deliver stability and high ruggedness throughout -55°C to +175°C operating temperature range.