PSMN071-100NSEX

Nexperia
771-PSMN071-100NSEX
PSMN071-100NSEX

Mfr.:

Description:
MOSFETs The factory is currently not accepting orders for this product.

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Product Attribute Attribute Value Select Attribute
Nexperia
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
DFN-2020M-6
N-Channel
1 Channel
100 V
9.8 A
82.3 mOhms
- 20 V, 20 V
3.6 V
6.5 nC
- 55 C
+ 175 C
31 W
Enhancement
Brand: Nexperia
Configuration: Single
Fall Time: 4.5 ns
Product Type: MOSFETs
Rise Time: 2.6 ns
Factory Pack Quantity: 3000
Subcategory: Transistors
Typical Turn-Off Delay Time: 5 ns
Typical Turn-On Delay Time: 3.8 ns
Part # Aliases: 934663731115
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Compliance Codes
TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

PSMN071-100NSE N-Channel ASFET

Nexperia PSMN071-100NSE N-Channel ASFET is designed for relay replacement, inrush management, and battery management applications. This ASFET includes an enhanced Safe Operating Area (SOA) for superior linear mode operation. The PSMN071-100NSE N-channel ASFET provides a low drain-source on-state resistance for low I2R conduction losses. This ASFET features a 100V maximum drain-source voltage, 9.8A maximum drain current, 31W maximum total power dissipation, and 175°C maximum junction temperature. The PSMN071-100NSE N-channel ASFET comes with enhanced SOA in a compact 2mm x 2mm DFN2020 package. In addition to those mentioned, other notable applications include IEEE802.3at and proprietary PoE solutions, WIFI® hotspots, 5G picocells, and CCTV.