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PMV30UN2R

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See Product Specifications

Mouser No:

771-PMV30UN2R

Mfr. No:

PMV30UN2R

Mfr.:

Nexperia

Description:

MOSFETs The factory is currently not accepting orders for this product.

Datasheet:

PMV30UN2R Datasheet (PDF)

ECAD Model:

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Learn more about Nexperia PMV30UN2R

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Nexperia
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TO-236AB-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	5.4 A
Rds On - Drain-Source Resistance:	32 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage:	400 mV
Qg - Gate Charge:	6.2 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Nexperia
Configuration:	Single
Fall Time:	10 ns
Product Type:	MOSFETs
Rise Time:	26 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel Trench MOSFET
Typical Turn-Off Delay Time:	35 ns
Typical Turn-On Delay Time:	7 ns
Part # Aliases:	934068491215
Unit Weight:	4 g

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The factory is currently not accepting orders for this product.

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Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

Origin Classifications

Country of Origin:: Malaysia
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

PMV Small Signal N-channel Trench MOSFETs

Nexperia PMV Small Signal N-channel Trench MOSFETs are N-channel enhancement mode Field-Effect Transistors (FET), each in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. They employ Trench MOSFET technology and offer a low threshold voltage and very fast switching. The PMV22EN MOSFET also offers logic-level compatibility. These MOSFETs are ideal for such applications as relay drivers, high-speed line drivers, low-side loadswitches, and switching circuits.