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PMDXB600UNELZ

Name: Nexperia PMDXB600UNELZ
Brand: Nexperia
SKU: 771-PMDXB600UNELZ
Price: 0.3 EUR
Availability: OutOfStock

Images are for reference only
See Product Specifications

Mouser No:

771-PMDXB600UNELZ

Mfr. No:

PMDXB600UNELZ

Mfr.:

Nexperia

Description:

MOSFETs SOT1216 2NCH 20V .6A

Datasheet:

PMDXB600UNELZ Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Nexperia PMDXB600UNELZ

Availability

Stock:: 0

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On Order:: 9.200

Expected 2/8/2027
Factory Lead Time:: 8

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 5000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	0,301 €	0,30 €
	0,182 €	1,82 €
	0,114 €	11,40 €
	0,085 €	42,50 €
	0,067 €	67,00 €
	0,065 €	162,50 €
Full Reel (Order in multiples of 5000)
	0,055 €	275,00 €
	0,05 €	500,00 €
	0,046 €	1.150,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Nexperia
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DFN-1010-6
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	600 mA
Rds On - Drain-Source Resistance:	470 mOhms, 470 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage:	450 mV
Qg - Gate Charge:	700 pC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	380 mW
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Nexperia
Configuration:	Dual
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	MY
Fall Time:	51 ns, 51 ns
Forward Transconductance - Min:	1 S, 1 S
Product Type:	MOSFETs
Rise Time:	9.2 ns, 9.2 ns
Factory Pack Quantity:	5000
Subcategory:	Transistors
Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	19 ns, 19 ns
Typical Turn-On Delay Time:	5.6 ns, 5.6 ns
Part # Aliases:	934070432147
Unit Weight:	1,217 mg

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Attributes selected: 0

Filter Document:

TARIC:: 8541210000
CNHTS:: 8541210000
CAHTS:: 8541210000
USHTS:: 8541210095
JPHTS:: 8541210101
KRHTS:: 8541219000
MXHTS:: 85412101
ECCN:: EAR99

PMDXBx 20V Trench MOSFETs

Nexperia PMDXBx 20V Trench MOSFETs consist of enhancement mode field-effect transistors (FET) in leadless, ultra-small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic packages. The devices employ Trench MOSFET technology, have an exposed drain pad for excellent thermal conduction, provide >1kV HBM ESD protection, and offer 470mΩ drain-source on-state resistance. The PMDXBx MOSFETs are available in dual N- and P-channel versions. The Nexperia PMDXBx 20V Trench MOSFETs are ideal for relay drivers, high-speed line drivers, low-side load switches, and switching circuits.

PMDXB600UNEL 20V Dual N-Channel Trench MOSFET

Nexperia PMDXB600UNEL 20V Dual N-Channel Trench MOSFET is an enhancement mode Field-Effect Transistor (FET) housed in a leadless ultrasmall surface-mounted plastic package. The PMDXB600UNEL features a low leakage current, and an exposed drain pad for excellent thermal conduction. Typical applications include relay drivers, high-speed line drivers, low-side load switches, and switching circuits.