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PBSS4330PAS-QX

Name: Nexperia PBSS4330PAS-QX
Brand: Nexperia
SKU: 771-PBSS4330PAS-QX
Price: 0.65 EUR
Availability: OutOfStock

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Mouser No:

771-PBSS4330PAS-QX

Mfr. No:

PBSS4330PAS-QX

Mfr.:

Nexperia

Description:

Bipolar Transistors - BJT PBSS4330PAS-Q/SOT1061/HUSON3

Datasheet:

PBSS4330PAS-QX Datasheet (PDF)

ECAD Model:

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Learn more about Nexperia PBSS4330PAS-QX

Availability

Stock:: Non-Stocked

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Factory Lead Time:: 8 Weeks Estimated factory production time.

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Minimum: 1 Multiples: 1

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Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	0,654 €	0,65 €
	0,407 €	4,07 €
	0,396 €	19,80 €
	0,263 €	26,30 €
	0,20 €	100,00 €
	0,181 €	181,00 €
Full Reel (Order in multiples of 3000)
	0,154 €	462,00 €
	0,141 €	846,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Nexperia
Product Category:	Bipolar Transistors - BJT
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DFN-2020D-3
Transistor Polarity:	NPN
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	30 V
Collector- Base Voltage VCBO:	50 V
Emitter- Base Voltage VEBO:	6 V
Collector-Emitter Saturation Voltage:	220 mV
Pd - Power Dissipation:	2.5 W
Gain Bandwidth Product fT:	210 MHz
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Nexperia
Continuous Collector Current:	3 A
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	MY
DC Collector/Base Gain hFE Min:	270 at 1 A, 2 V
DC Current Gain hFE Max:	700 at 1 A, 2 V
Product Type:	BJTs - Bipolar Transistors
Factory Pack Quantity:	3000
Subcategory:	Transistors
Part # Aliases:	934664701115

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Datasheet

PBSS4330PAS-QX Datasheet (PDF)

PCN

Product Change Notification 2024-03-04 (PDF)

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TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
MXHTS:: 8541299900
ECCN:: EAR99

BJT DFN-Packaged Power Bipolar Transistors

Nexperia BJT DFN-Packaged Power Bipolar Transistors offer a small form factor that uses about 75% less board space and allows more design flexibility. These bipolar transistors feature reduced parasitic inductance and capacitance with an improved, low thermal resistance, enabling higher reliability. The BJT components are ideal for applications where space is at a premium. Applications include mobile devices, wearables, automotive sensors, and camera modules.