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PBSS3540M,315

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See Product Specifications

Mouser No:

771-PBSS3540M315

Mfr. No:

PBSS3540M,315

Mfr.:

Nexperia

Description:

Bipolar Transistors - BJT PBSS3540M/SOT883/XQFN3

Datasheet:

PBSS3540M,315 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Nexperia PBSS3540M,315

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Nexperia
Product Category:	Bipolar Transistors - BJT
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DFN-1006-3
Transistor Polarity:	PNP
Configuration:	Single
Maximum DC Collector Current:	500 mA
Collector- Emitter Voltage VCEO Max:	40 V
Collector- Base Voltage VCBO:	40 V
Emitter- Base Voltage VEBO:	6 V
Collector-Emitter Saturation Voltage:	350 mV
Pd - Power Dissipation:	430 mW
Gain Bandwidth Product fT:	300 MHz
Minimum Operating Temperature:	- 65 C
Maximum Operating Temperature:	+ 150 C
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Nexperia
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
DC Collector/Base Gain hFE Min:	200 at 10 mA, 2 V, 150 at 100 mA, 2 V, 40 at 500 mA, 2 V
DC Current Gain hFE Max:	200 at 10 mA, 2 V
Product Type:	BJTs - Bipolar Transistors
Factory Pack Quantity:	10000
Subcategory:	Transistors
Part # Aliases:	934057155315
Unit Weight:	0,800 mg

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Filter Document:

TARIC:: 8541210000
CNHTS:: 8541210000
CAHTS:: 8541210000
USHTS:: 8541210075
JPHTS:: 8541210101
KRHTS:: 8541219000
MXHTS:: 85412101
ECCN:: EAR99

BJT DFN-Packaged Power Bipolar Transistors

Nexperia BJT DFN-Packaged Power Bipolar Transistors offer a small form factor that uses about 75% less board space and allows more design flexibility. These bipolar transistors feature reduced parasitic inductance and capacitance with an improved, low thermal resistance, enabling higher reliability. The BJT components are ideal for applications where space is at a premium. Applications include mobile devices, wearables, automotive sensors, and camera modules.