BUK9Q29-60EJ

Nexperia
771-BUK9Q29-60EJ
BUK9Q29-60EJ

Mfr.:

Description:
MOSFETs BUK9Q29-60E/SOT8002/MLPAK33

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
ECAD Model:
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In Stock: 2.236

Stock:
2.236 Can Dispatch Immediately
Factory Lead Time:
12 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
0,757 € 0,76 €
0,473 € 4,73 €
0,457 € 22,85 €
0,307 € 30,70 €
0,236 € 118,00 €
0,212 € 212,00 €
Full Reel (Order in multiples of 3000)
0,182 € 546,00 €
0,168 € 1.008,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Nexperia
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
MLPAK33-8
N-Channel
1 Channel
60 V
21 A
29 mOhms
20 V
2.1 V
12 nC
- 55 C
+ 175 C
27 W
Enhancement
Reel
Cut Tape
MouseReel
Brand: Nexperia
Configuration: Single
Fall Time: 5 ns
Forward Transconductance - Min: 18.6 S
Product Type: MOSFETs
Rise Time: 4 ns
Factory Pack Quantity: 3000
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 13 ns
Typical Turn-On Delay Time: 3 ns
Part # Aliases: 934670286118 934670286118, BXK9Q29-60EJ
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Attributes selected: 0

Datasheet

TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

BUK9Q N-Channel Trench MOSFET

Nexperia BXK9Q29-60A N-Channel Trench MOSFET is an enhancement mode Field-Effect Transistor (FET) in a small SOT8002-3 (MLPAK33) SMD plastic package using Trench MOSFET technology. This N-channel MOSFET is logic-level compatible, fast switching, and fully automotive qualified to AEC-Q101 at 175°C. The BXK9Q29-60A trench MOSFET features a 60V maximum drain-source voltage, 84A maximum peak drain current, and 27W maximum total power dissipation. This N-channel MOSFET also features a 23.7mΩ typical drain-source on-state resistance, 25mJ maximum non-repetitive drain-source avalanche energy, and 15.8A maximum non-repetitive avalanche current. The BXK9Q29-60A trench MOSFET is EU/CN RoHS-compliant. Typical applications include LED lighting, switching circuits, and DC-DC conversion.

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