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NV6012C-RA

Name: Navitas Semiconductor NV6012C-RA
Brand: Navitas Semiconductor
SKU: 740-NV6012C-RA
Price: 1.61 EUR
Availability: InStock

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Mouser No:

740-NV6012C-RA

Mfr. No:

NV6012C-RA

Mfr.:

Navitas Semiconductor

Description:

GaN FETs GaNFast Discrete 650V 450mOhm PQFN 56

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

NV6012C-RA Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Navitas Semiconductor NV6012C-RA

In Stock: 689

Stock:: 689 Can Dispatch Immediately

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Factory Lead Time:: 26 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	1,61 €	1,61 €
	1,08 €	10,80 €
	0,912 €	91,20 €
	0,877 €	438,50 €
Full Reel (Order in multiples of 1000)
	0,842 €	842,00 €
	0,808 €	1.616,00 €
	0,788 €	3.940,00 €
	0,78 €	7.800,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Navitas Semiconductor
Product Category:	GaN FETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	QFN-8
Vds - Drain-Source Breakdown Voltage:	700 V
Id - Continuous Drain Current:	2.7 A
Rds On - Drain-Source Resistance:	600 mOhms
Vgs - Gate-Source Voltage:	- 10 V, 7 V
Vgs th - Gate-Source Threshold Voltage:	2.8 V
Qg - Gate Charge:	0.85 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	25.4 W
Brand:	Navitas Semiconductor
Fall Time:	6 ns
Packaging:	Reel
Packaging:	Cut Tape
Product:	GaN FET
Product Type:	GaN FETs
Rise Time:	10 ns
Series:	GaNFET
Factory Pack Quantity:	1000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	5.4 ns
Typical Turn-On Delay Time:	4.6 ns

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Datasheet

NV6012C-RA Datasheet (PDF)

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

NV60x GaNFast™ Power FETs

Navitas Semiconductor NV60x GaNFast™ Power FETs are high‑performance enhancement‑mode GaN power devices engineered for fast‑switching, high‑efficiency power systems. These FETs feature ultra‑low gate charge, zero reverse‑recovery behavior, and minimized output charge, enabling high‑frequency operation up to 10MHz across the series. The Navitas Semiconductor NV60x supports 700V continuous and 800V transient drain‑to‑source voltages, providing robust headroom for demanding AC‑DC, DC‑DC, and DC‑AC topologies.

GaNFast™ Power ICs

Navitas Semiconductor GaNFast™ Power ICs are easy-to-use, high-speed, high-performance 'digital-in, power-out' building blocks. The components feature an integrated gate drive, wide-range V_CC and PWM inputs, internal 2kV ESD protection and a large thermal cooling pad. Monolithically integrating the driver and power stages enables high switching frequencies while keeping the signal clean and eliminating any unwanted noise that might affect the device's control and reliability. The GaNFast Power ICs enable high-frequency operation with ease of use, design flexibility and compatibility with popular topologies and controllers.