MRF24G300HSR5

NXP Semiconductors
771-MRF24G300HSR5
MRF24G300HSR5

Mfr.:

Description:
GaN FETs RF Power GaN Transistor, 300 W CW over 2400-2500 MHz, 50 V

Lifecycle:
Obsolete
ECAD Model:
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Availability

Stock:

Product Attribute Attribute Value Select Attribute
NXP
Product Category: GaN FETs
Delivery Restrictions:
 Mouser does not presently sell this product in your region.
RoHS:  
SMD/SMT
NI-780H-4
N-Channel
2 Channel
125 V
24.3 mA
- 8 V
- 2.3 V
- 55 C
+ 150 C
Brand: NXP Semiconductors
Maximum Operating Frequency: 2.5 GHz
Minimum Operating Frequency: 2.4 GHz
Packaging: Reel
Packaging: Cut Tape
Product Type: GaN FETs
Series: MRF24G300
Factory Pack Quantity: 50
Subcategory: Transistors
Technology: GaN-on-SiC
Type: RF Power MOSFET
Part # Aliases: 935389771178
Unit Weight: 300 g
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Attributes selected: 0

Compliance Codes
CNHTS:
8541290000
USHTS:
8541290055
ECCN:
EAR99
Origin Classifications
Country of Origin:
Malaysia
Assembly Country of Origin:
Malaysia
Country of Diffusion:
United States
The country is subject to change at the time of shipment.

MRF24G300HS RF Power GaN Transistor

NXP Semiconductors MRF24G300HS RF Power GaN Transistor is a 300W Continuous Wave (CW) transistor designed for Industrial, Scientific, and Medical (ISM) applications at 2450MHz. This device is suitable for use in CW, long pulse, short pulse, cycling, and linear applications. The MRF24G300HS Transistor can be used in a single-ended or push-pull configuration, and is input-matched for simplified input circuitry design.