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AFT09MS007NT1

Name: NXP AFT09MS007NT1
Brand: NXP Semiconductors
SKU: 841-AFT09MS007NT1
Price: 10.41 EUR
Availability: InStock

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See Product Specifications

Mouser No:

841-AFT09MS007NT1

Mfr. No:

AFT09MS007NT1

Mfr.:

NXP Semiconductors

Datasheet:

ECAD Model:

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Stock:: 5.616 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 1000)

Cut Tape

MouseReel™ (+5,00 €)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	10,41 €	10,41 €
	7,71 €	77,10 €
	5,90 €	590,00 €
	5,57 €	2.785,00 €
Full Reel (Order in multiples of 1000)
	5,20 €	5.200,00 €
	5,19 €	10.380,00 €
5.000	Quote

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	NXP
Product Category:	RF MOSFET Transistors
RoHS:
REACH - SVHC:
Transistor Polarity:	N-Channel
Technology:	Si
Id - Continuous Drain Current:	3 A
Vds - Drain-Source Breakdown Voltage:	30 V
Operating Frequency:	136 MHz to 941 MHz
Gain:	15.2 dB
Output Power:	7.3 W
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Mounting Style:	SMD/SMT
Package/Case:	PLD-1.5
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	NXP Semiconductors
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	US
Forward Transconductance - Min:	9.8 S
Moisture Sensitive:	Yes
Number of Channels:	1 Channel
Pd - Power Dissipation:	114 W
Product Type:	RF MOSFET Transistors
Series:	AFT09MS007N
Factory Pack Quantity:	1000
Subcategory:	MOSFETs
Type:	RF Power MOSFET
Vgs - Gate-Source Voltage:	+ 12 V
Vgs th - Gate-Source Threshold Voltage:	2.1 V
Part # Aliases:	935318254515
Unit Weight:	280 mg