A5G21H605W19NR3

NXP Semiconductors
771-A5G21H605W19NR3
A5G21H605W19NR3

Mfr.:

Description:
GaN FETs Airfast RF Power GaN Transistor, 2110-2200 MHz, 85 W Avg., 48 V

Lifecycle:
End of Life:
Scheduled for obsolescence and will be discontinued by the manufacturer.
Datasheet:
ECAD Model:
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In Stock: 158

Stock:
158 Can Dispatch Immediately
Factory Lead Time:
53 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
236,88 € 236,88 €
202,75 € 2.027,50 €
194,24 € 4.856,00 €
189,10 € 9.455,00 €
186,45 € 18.645,00 €
Full Reel (Order in multiples of 250)
163,51 € 40.877,50 €
500 Quote

Product Attribute Attribute Value Select Attribute
NXP
Product Category: GaN FETs
RoHS:  
SMD/SMT
OM-780-4S4S-8
125 V
- 55 C
+ 150 C
Brand: NXP Semiconductors
Country of Assembly: MY
Country of Diffusion: NL
Country of Origin: MY
Maximum Operating Frequency: 2.2 GHz
Minimum Operating Frequency: 2.11 GHz
Moisture Sensitive: Yes
Output Power: 85 W
Packaging: Reel
Packaging: Cut Tape
Product Type: GaN FETs
Factory Pack Quantity: 250
Subcategory: Transistors
Technology: GaN-on-Si
Part # Aliases: 935451705528
Products found:
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Attributes selected: 0

Datasheet

PCN

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TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290055
JPHTS:
854129000
KRHTS:
8541299000
MXHTS:
8541299900
ECCN:
EAR99

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