A2G26H281-04SR3

NXP Semiconductors
841-A2G26H281-04SR3
A2G26H281-04SR3

Mfr.:

Description:
GaN FETs Airfast RF Power GaN Transistor, 2496-2690 MHz, 50 W Avg., 48 V

Lifecycle:
Obsolete
Datasheet:
ECAD Model:
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Availability

Stock:

Product Attribute Attribute Value Select Attribute
NXP
Product Category: GaN FETs
Delivery Restrictions:
 Mouser does not presently sell this product in your region.
RoHS:  
SMD/SMT
NI-780S-4
N-Channel
125 V
- 2.3 V
- 55 C
+ 150 C
Brand: NXP Semiconductors
Configuration: Dual
Gain: 14.2 dB
Maximum Operating Frequency: 2.635 GHz
Minimum Operating Frequency: 2.575 GHz
Output Power: 50 W
Packaging: Reel
Packaging: Cut Tape
Product Type: GaN FETs
Series: A2G26H281-04
Factory Pack Quantity: 250
Subcategory: Transistors
Technology: GaN
Vgs - Gate-Source Breakdown Voltage: - 8 V, 0 V
Part # Aliases: 935332873128
Unit Weight: 4,652 g
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Attributes selected: 0

Datasheet

PCN

Compliance Codes
TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290055
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412999
ECCN:
EAR99
Origin Classifications
Country of Origin:
Not available
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

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