935146837522-T3T

Murata Electronics
81-935146837522-T3T
935146837522-T3T

Mfr.:

Description:
Silicon RF Capacitors / Thin Film Low profile, High temperature, Wirebonding

Datasheet:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
20 Weeks Estimated factory production time.
Minimum: 1000   Multiples: 1000
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
Full Reel (Order in multiples of 1000)
1,18 € 1.180,00 €
1,13 € 2.260,00 €
1,07 € 5.350,00 €

Similar Products

Product Attribute Attribute Value Select Attribute
Murata
Product Category: Silicon RF Capacitors / Thin Film
RoHS:  
22 nF
33 V
0402 (1005 metric)
15 %
WLSC
70 PPM / C
- 55 C
+ 150 C
Reel
Brand: Murata Electronics
Breakdown Voltage: 30 V
Case Code - in: 0402
Case Code - mm: 1005
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: FR
Height: 0.1 mm
Length: 1 mm
Maximum Operating Frequency: 26 GHz
Product: RF Capacitors
Product Type: Silicon RF Capacitors / Thin Film
Factory Pack Quantity: 1000
Subcategory: Capacitors
Termination Style: Wire
Type: Wire Bonding
Voltage Rating DC: 33 VDC
Width: 0.5 mm
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Attributes selected: 0

Datasheet

TARIC:
8532290000
CNHTS:
8532290000
USHTS:
8532290040
ECCN:
EAR99

WLSC Wire-Bondable Low-Profile Si Capacitors

Murata WLSC Wire-Bondable Vertical Low-Profile (100µm thick) Silicon Capacitors target RF high-power applications for wireless communication (e.g. 5G), radar, and data broadcasting systems. The WLSC capacitors are suitable for DC decoupling, matching network, and harmonic/noise-filtering functions. These Si capacitors have been developed with a semiconductor process that enables the integration of high capacitance density from 1.55nF/mm2 to 250nF/mm2 (with a breakdown voltage of 450V to 11V, respectively).

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