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MP1918GQE-Z

Name: Monolithic Power Systems (MPS) MP1918GQE-Z
Brand: Monolithic Power Systems (MPS)
SKU: 946-MP1918GQE-Z
Price: 3.36 EUR
Availability: InStock

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Mouser No:

946-MP1918GQE-Z

Mfr. No:

MP1918GQE-Z

Mfr.:

Monolithic Power Systems (MPS)

Description:

Gate Drivers 100V, High-Frequency, Half-Bridge GaN/MOSFET Driver

Lifecycle:

New At Mouser

Datasheet:

MP1918GQE-Z Datasheet

ECAD Model:

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Learn more about Monolithic Power Systems (MPS) MP1918GQE-Z

In Stock: 4.075

Stock:: 4.075 Can Dispatch Immediately

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Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

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Ext. Price:

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	3,36 €	3,36 €
	2,28 €	22,80 €
	2,11 €	52,75 €
	1,83 €	183,00 €
	1,72 €	430,00 €
	1,51 €	755,00 €
	1,25 €	1.250,00 €
	1,18 €	2.950,00 €
Full Reel (Order in multiples of 5000)
	1,14 €	5.700,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Monolithic Power Systems (MPS)
Product Category:	Gate Drivers
RoHS:
Product:	Gate Drivers
Type:	Half-Bridge
Mounting Style:	SMD/SMT
Package/Case:	QFN-14
Number of Drivers:	2 Driver
Number of Outputs:	1 Output
Output Current:	5 A
Supply Voltage - Min:	3.7 V
Supply Voltage - Max:	5.5 V
Rise Time:	5 ns
Fall Time:	3 ns
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Monolithic Power Systems (MPS)
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Logic Type:	TTL
Maximum Turn-Off Delay Time:	30 ns
Maximum Turn-On Delay Time:	30 ns
Off Time - Max:	6 ns
Operating Supply Current:	1 mA
Output Voltage:	100 V
Product Type:	Gate Drivers
Propagation Delay - Max:	30 ns
Shutdown:	Shutdown
Factory Pack Quantity:	5000
Subcategory:	PMIC - Power Management ICs
Technology:	GaN

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Datasheet

MP1918GQE-Z Datasheet

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CAHTS:: 8542310000
USHTS:: 8542310030
ECCN:: EAR99

MP1918 100V Half-Bridge GaN MOSFET Drivers

Monolithic Power Systems (MPS) MP1918 100V Half-Bridge GaN MOSFET Drivers are designed for driving enhancement mode Gallium Nitride (GaN) FETs or N-channel MOSFETs. The Monolithic Power Systems (MPS) MP1918 features independent high-side (HS) and low-side (LS) PWM inputs and uses a bootstrap technique for the HS driver voltage. The device operates up to 100V and includes a charging technology that prevents the HS driver voltage from exceeding the V_CC, protecting the gate from surpassing the GaN FETs maximum gate-to-source voltage rating.