MSCSM120AM042CD3AG

Microchip Technology
494-120AM042CD3AG
MSCSM120AM042CD3AG

Mfr.:

Description:
Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-D3

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In Stock: 6

Stock:
6 Can Dispatch Immediately
Factory Lead Time:
20 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 6 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
565,67 € 565,67 €

Product Attribute Attribute Value Select Attribute
Microchip
Product Category: Discrete Semiconductor Modules
RoHS:  
MOSFET / SiC SBD
Bulk
Brand: Microchip Technology
Fall Time: 67 ns
Id - Continuous Drain Current: 495 A
Maximum Operating Temperature: + 125 C
Minimum Operating Temperature: - 40 C
Mounting Style: Screw Mount
Package/Case: D3
Pd - Power Dissipation: 2.031 kW
Product: MOSFET-SiC SBD Modules
Product Type: Discrete Semiconductor Modules
Rds On - Drain-Source Resistance: 5.2 mOhms
Rise Time: 55 ns
Factory Pack Quantity: 1
Subcategory: Discrete Semiconductor Modules
Technology: SiC
Transistor Polarity: N-Channel
Typical Turn-Off Delay Time: 166 ns
Typical Turn-On Delay Time: 56 ns
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Vf - Forward Voltage: 1.5 V
Vgs - Gate-Source Voltage: - 10 V, + 25 V
Vgs th - Gate-Source Threshold Voltage: 1.8 V
Vr - Reverse Voltage: 1.2 kV
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USHTS:
8541290065
ECCN:
EAR99