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MSC750SMA170S

Name: Microchip MSC750SMA170S
Brand: Microchip Technology
SKU: 494-MSC750SMA170S
Price: 5.32 EUR
Availability: OutOfStock

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Mouser No:

494-MSC750SMA170S

Mfr. No:

MSC750SMA170S

Mfr.:

Microchip Technology

Description:

SiC MOSFETs MOSFET SIC 1700 V 750 mOhm TO-268

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Datasheet:

MSC750SMA170S Datasheet

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On Order:: 146

Expected 6/5/2026
Factory Lead Time:: 4

Weeks Estimated factory production time for quantities greater than shown.

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	5,32 €	5,32 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Microchip
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	D3PAK-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.7 kV
Id - Continuous Drain Current:	4.4 A
Rds On - Drain-Source Resistance:	750 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 23 V
Vgs th - Gate-Source Threshold Voltage:	3.25 V
Qg - Gate Charge:	11 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	63 W
Channel Mode:	Enhancement
Brand:	Microchip Technology
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	PH
Packaging:	Tube
Product Type:	SiC MOSFETS
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	SiC
Unit Weight:	6,200 g

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Datasheet

MSC750SMA170S Datasheet

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PCN

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CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Silicon Carbide (SiC) Schottky Barrier Diodes

Microchip Technology Silicon Carbide (SiC) Schottky Barrier Diodes (SBD) offer dynamic and thermal performance over conventional Silicon (Si) power diodes. SiC devices offer a much greater dielectric breakdown field strength, higher bandgap, and higher thermal conductivity compared to Silicon-only devices. SiC SBDs feature zero forward and reverse recovery charges, reducing diode switching losses. These devices also offer temperature-independent switching, ensuring stable high-temperature performance.