MSC100SM70JCU2

Microchip Technology
494-MSC100SM70JCU2
MSC100SM70JCU2

Mfr.:

Description:
Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SOT227

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Availability

Stock:
Non-Stocked
Factory Lead Time:
20 Weeks Estimated factory production time.
Minimum: 14   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
43,54 € 609,56 €

Product Attribute Attribute Value Select Attribute
Microchip
Product Category: Discrete Semiconductor Modules
RoHS:  
MOSFET-SiC SBD Modules
MOSFET / SiC SBD
SiC
1.5 V
700 V
- 10 V, + 25 V
Screw Mount
SOT-227
- 55 C
+ 175 C
Bulk
Brand: Microchip Technology
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: PH
Fall Time: 20 ns
Id - Continuous Drain Current: 124 A
Pd - Power Dissipation: 365 W
Product Type: Discrete Semiconductor Modules
Rds On - Drain-Source Resistance: 19 mOhms
Rise Time: 35 ns
Factory Pack Quantity: 1
Subcategory: Discrete Semiconductor Modules
Transistor Polarity: N-Channel
Typical Turn-Off Delay Time: 50 ns
Typical Turn-On Delay Time: 40 ns
Vds - Drain-Source Breakdown Voltage: 700 V
Vgs th - Gate-Source Threshold Voltage: 1.9 V
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USHTS:
8541290065
ECCN:
EAR99

Silicon Carbide (SiC) Schottky Barrier Diodes

Microchip Technology Silicon Carbide (SiC) Schottky Barrier Diodes (SBD) offer dynamic and thermal performance over conventional Silicon (Si) power diodes. SiC devices offer a much greater dielectric breakdown field strength, higher bandgap, and higher thermal conductivity compared to Silicon-only devices. SiC SBDs feature zero forward and reverse recovery charges, reducing diode switching losses. These devices also offer temperature-independent switching, ensuring stable high-temperature performance.