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MSC025SMA120B4

Name: Microchip MSC025SMA120B4
Brand: Microchip Technology
SKU: 494-MSC025SMA120B4
Price: 32.52 EUR
Availability: InStock

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Mouser No:

494-MSC025SMA120B4

Mfr. No:

MSC025SMA120B4

Mfr.:

Microchip Technology

Description:

SiC MOSFETs MOSFET SIC 1200 V 25 mOhm TO-247-4

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Datasheet:

MSC025SMA120B4 Datasheet (PDF)

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Learn more about Microchip Technology MSC025SMA120B4

In Stock: 258

Stock:: 258 Can Dispatch Immediately

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Factory Lead Time:: 27 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	32,52 €	32,52 €
	31,11 €	311,10 €
	30,28 €	908,40 €
	29,35 €	3.522,00 €
	28,53 €	7.703,10 €
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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Microchip
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	103 A
Rds On - Drain-Source Resistance:	31 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 23 V
Vgs th - Gate-Source Threshold Voltage:	1.8 V
Qg - Gate Charge:	232 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	500 W
Channel Mode:	Enhancement
Brand:	Microchip Technology
Configuration:	Single
Fall Time:	10 ns
Packaging:	Tube
Product Type:	SiC MOSFETS
Rise Time:	35 ns
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	35 ns
Typical Turn-On Delay Time:	18 ns
Unit Weight:	6 g

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Datasheet

MSC025SMA120B4 Datasheet (PDF)

DTS

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Compliance Codes

CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Origin Classifications

Country of Origin:: Philippines
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

Silicon Carbide (SiC) Schottky Barrier Diodes

Microchip Technology Silicon Carbide (SiC) Schottky Barrier Diodes (SBD) offer dynamic and thermal performance over conventional Silicon (Si) power diodes. SiC devices offer a much greater dielectric breakdown field strength, higher bandgap, and higher thermal conductivity compared to Silicon-only devices. SiC SBDs feature zero forward and reverse recovery charges, reducing diode switching losses. These devices also offer temperature-independent switching, ensuring stable high-temperature performance.