APT50GR120JD30

Microchip Technology
494-APT50GR120JD30
APT50GR120JD30

Mfr.:

Description:
IGBTs IGBT MOS 8 1200 V 50 A SOT-227
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Datasheet:
ECAD Model:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
28,32 € 28,32 €

Product Attribute Attribute Value Select Attribute
Microchip
Product Category: IGBTs
RoHS:  
SMD/SMT
ISOTOP-4
Single
- 55 C
+ 150 C
Tube
Brand: Microchip Technology
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 3.5 V
Continuous Collector Current at 25 C: 84 A
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: PH
Gate-Emitter Leakage Current: 250 nA
Maximum Gate Emitter Voltage: 30 V
Pd - Power Dissipation: 417 W
Product Type: IGBT Transistors
Factory Pack Quantity: 1
Subcategory: IGBTs
Technology: Si
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Attributes selected: 0

Datasheet

DTS

PCN

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TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
MXHTS:
8541299900
ECCN:
EAR99

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