GTVA262701FA-V2-R0

MACOM
941-GTVA262701FAV2R0
GTVA262701FA-V2-R0

Mfr.:

Description:
GaN FETs 270W GaN HEMT 48V 2496 to 2690MHz

ECAD Model:
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In Stock: 53

Stock:
53 Can Dispatch Immediately
Quantities greater than 53 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 50)
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
173,00 € 173,00 €
147,44 € 1.474,40 €
Full Reel (Order in multiples of 50)
147,44 € 7.372,00 €
100 Quote
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
MACOM
Product Category: GaN FETs
RoHS:  
Screw Mount
H-87265J-2
N-Channel
125 V
12 A
+ 225 C
Brand: MACOM
Gain: 17 dB
Maximum Operating Frequency: 2.69 GHz
Minimum Operating Frequency: 2.496 GHz
Output Power: 270 W
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Product Type: GaN FETs
Factory Pack Quantity: 50
Subcategory: Transistors
Technology: GaN
Transistor Type: GaN HEMT
Vgs - Gate-Source Breakdown Voltage: - 10 V to 2 V
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USHTS:
8541290055
ECCN:
EAR99

5G RF JFETs & LDMOS FETs

MACOM 5G RF Junction Field Effect Transistors (JFETs) and Laterally Diffused Metal-Oxide Semiconductor (LDMOS) FETs are thermally enhanced high-power transistors for the next generation of wireless transmission. These devices feature GaN-on-SiC high electron mobility transistor (HEMT) technology, input matching, high efficiency, and a thermally enhanced surface-mount package with an earless flange. MACOM 5G RF JFETs and LDMOS FETs are ideal for multi-standard cellular power amplifier applications.