GTVA126001EC-V1-R0

MACOM
941-GTVA126001ECV1R0
GTVA126001EC-V1-R0

Mfr.:

Description:
GaN FETs GaN HEMT 50V 1.2-1.4GHz 600W

Datasheet:
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Learn more about MACOM GTVA126001EC-V1-R0

In Stock: 9

Stock:
9 Can Dispatch Immediately
Factory Lead Time:
26 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 9 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 50)
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
968,52 € 968,52 €
Full Reel (Order in multiples of 50)
968,52 € 48.426,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
MACOM
Product Category: GaN FETs
RoHS:  
Screw Mount
H-36248-2
N-Channel
150 V
10 A
- 3 V
Brand: MACOM
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: US
Gain: 18 dB
Maximum Operating Frequency: 1.4 GHz
Minimum Operating Frequency: 1.2 GHz
Output Power: 600 W
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Product Type: GaN FETs
Factory Pack Quantity: 50
Subcategory: Transistors
Technology: GaN
Transistor Type: GaN HEMT
Vgs - Gate-Source Breakdown Voltage: - 10 V to 2 V
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Attributes selected: 0

Datasheet

PCN

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USHTS:
8541290055
ECCN:
EAR99

GTVA High-Power RF GaN on SiC HEMT

Wolfspeed / Cree GTVA High-Power RF GaN on SiC HEMT are 50V high-electron-mobility transistors (HEMT) based on gallium-nitride on silicon carbide technology. GaN on SiC devices offer high power density coupled with a high breakdown voltage, enabling highly efficient power amplifiers. The GTVA High-Power RF GaN on SiC HEMT feature input matching, high efficiency, and thermally-enhanced packages. These pulsed/CW (continuous-wave) devices have a pulse width of 128µs and a duty cycle of 10%.

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